| PART |
Description |
Maker |
| SSO-AD-800-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-500-TO52NF |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-230-TO52NF |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-1900-TO5I SSO-AD-2500-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-230NIR-TO52-S1 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| C30645E C30662E |
InGaAs Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SSO-AD-500NIR-TO52 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| SRD00512Z Q62702-P3042 SRD00512 |
From old datasheet system
Ge-Avalanche Photodiode in TO Package with Integrated Optics
|
SIEMENS[Siemens Semiconductor Group]
|
| SD394-70-74-591 |
Cooled Large Area Blue Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
